Semiconductor laser

Abstract

Abstract PURPOSE:To manufacture a semiconductor laser in stable wavelength with coupling constant to be increased for oscillating at low threshold value current by a method wherein the first conductivity type semiconductor layer is formed on the second conductivity type clad layer side of diffraction gratings. CONSTITUTION:In terms of the periodic fluctuation in effective refractive index due to higher refractive index of a guide layer 4 than that of a clad layer 6, the refractive index of the parts formed into n-InP layers 5 of difration gratings 10 is specified to be higher due to the higher thicknes on the guide layer 4 while the refrative index of the parts removed of n-InP layers 5 to be lower due to the slightly lower thicknes in the guide layer 4. At this time, the refractive index is decreased by the plasma effect of hole concentrated in the hetero junction parts of p-p of the difraction gratings 10 so that the periodic fluctuation in the effective refrative index decided by the shape of difration gratings 10 may be increased.

Inventors

• 👤 Yuji Abe
• 👤 雄次 阿部
• 👤 Kenichi Otsuka
• 👤 健一 大塚
• 👤 Hiroshi Sugimoto
• 👤 博司 杉本
• 👤 Teruhito Matsui
• 👤 松井　輝仁

Bibliographic Details