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JPS63283031A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor manufacture apparatus

Assignee: Seiko Epson Corp
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Filing: 1988-03-31
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Granted: —
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Expires: 2008-03-31
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Abstract

Abstract PURPOSE:To remove a deposit from the inside of a core tube used for manufacturing semiconductors, by applying high frequency energy from the inside or outside of the core tube. CONSTITUTION:In order to remove a deposit 11 such as Si3N4 or the like from a core tube 1, CF4 is supplied at a controlled rate into the core tube 1 from an one end 12 thereof while it is exhausted from the other end such that a decreased pressure of 10<-2>-10<-3> is established within the core tube 1. Then, plasma is produced by applying high frequency energy to a coil 10 wound on the outer periphery of the core tube 1, and the deposit 11 is removed by the plasma. If the coil 10 is deviated relatively with respect to the core tube 1, the deposit 11 can be removed uniformly from the inside of the whole core tube 1.

Inventors

  • 👤 Yasumasa Otsuki
  • 👤 大月 康正

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 09:42
CPC Classifications
—

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS5821826A Cited

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