High frequency power amplifier

Abstract

Abstract PURPOSE:To improve a synthesizing efficiency by constituting a power distributing/synthesizing circuit in a microwave hybrid integrated circuit, in a power amplifier in which the plural chips of a semiconductor element are parallely connected, using the respective branch circuits of the distributing/ synthesizing circuit for a suspended line according to a circuit length and making uniform phase displacement. CONSTITUTION:On a dielectric substrate 5, plural FET chips 1 are arranged and provided in a straight line, input output terminals A and B are provided to a perpendicular direction to this straight line, a branch circuit 3 is provided as to widen toward the end for distributing/synthesizing and connected to the input output edge of the respective FET chips 1. Though this branch circuit 3 has respectively different lengths, a suspended line 4 is constituted of this, a width W and a distance H are selected in the branch circuit 3 and the input terminal of an input terminal A-the chip 1 and the output terminal of the chip-an output terminal B are respectively made in equal wavelength distances. Thus, an input from the input edge A are distributed to the same phase even in any input terminals of the chip 1 and amplified with the same characteristic and the synthesizing efficiency of output power comes to be the highest.

Inventors

• 👤 Shiyuuji Kobayakawa
• 👤 周磁 小早川
• 👤 Hisafumi Okubo
• 👤 大久保　尚史

Bibliographic Details