Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To provide a semiconductor device with a wiring, strong against heat and chemicals and stable in presenting low resistance, by a method wherein a layer, which is a mixture of a high-melting metal and silicon, and a titanium layer are stacked up and then subjected to heat treatment for the construction of a mixed layer wherein a silicide of the high-melting metal combines titanium silicide. CONSTITUTION:A field insulating film 2 is provided on a surface of a P-type semiconductor substrate 1, which defines a region for element formation. A gate insulating film 3 and a wiring pattern layer 1 are formed on the surface including said element forming region. Next, an N-type diffusion layer 5 is formed, and an opening is provided for the establishment of contact. A titanium layer 6 is deposited on the surface including the opening for contact. A thermal process follows wherein the wiring pattern layer 4 and the titanium layer 6 combine into a mixture layer 7 of tungsten silicide and titanium silicide, when a titanium silicide layer 8 is also produced through reaction between the N-type diffusion layer 5 and the titanium layer 6. Finally, an electrode wiring is constructed of the titanium silicide layer 8, connecting to the N-type diffusion region 5, and the mixture layer 7 composed of tungsten silicide and titanium silicide.

Inventors

• 👤 Nobuyasu Kitaoka
• 👤 信恭 北岡

Bibliographic Details