Manufacture of superconductive material

Abstract

Abstract PURPOSE:To be able to form an active region or a resistor of an active element out of an identical main component material by a method wherein a superconductive material or a basic material thereof formed on a substrate is selectively doped with impurity and the doped region is rendered to be a resistive or an active region. CONSTITUTION:A superconductive material or a basic material 2 thereof formed on a substrate 1 is selectively doped with impurity and the doped region 5 is rendered to be a resistive region 11 or an active region. For example, a material, which is turned into (YBa2)Cu3O6-8 after being formed into film, is provided on an insulating substrate 1 formed of single crystal SrTiO3 through sputtering for the formation of a basic material for a superconductive material and annealed at temperature of 800-1000 deg.C in oxygen so as to be regenerated into a single-crystal superconductive material 2. Photoresist 3 is selectively coated onto the upper face of the superconductive material 2 and a region 5 not coated with resist is doped with silicon by means of ion-implantation 4. Thereafter calcination is performed at temperature of 700-1000 deg.C in oxidizing atmosphere so as to transfer Tco of an ion-implanted region 11 to lower temperature side, and the impurity doped region 11 is used as a resistive region.

Inventors

• 👤 Shunpei Yamazaki
• 👤 舜平 山崎

Bibliographic Details