Method for synthesizing diamond in vapor phase

Abstract

Abstract PURPOSE:To control the crystallinity of diamond and to increase the growth rate by using an org. compd. having a methyl group as the carbon source, a gas reactive with carbon, and/or an inert gas to produce plasma, and heating a substrate to a specified temp. CONSTITUTION:The substrate is set in or on the outside of the plasma produced by a microwave. The substrate is heated to 300-1,500 deg.C by a microwave, plasma, or a heater. The org. compd. having a methyl group as the carbon source, a gas reactive with carbon, and/or an inert gas are used to deposit diamond on the surface of the substrate. One or more kinds of gaseous diluents among H2, N2, O2 and H2O are used as the gas reactive with carbon.

Inventors

• 👤 Hiroaki Toshima
• 👤 戸嶋　博昭
• 👤 Yoichi Yaguchi
• 👤 洋一 矢口
• 👤 Yuji Amada
• 👤 天田　祐治
• 👤 Osamu Matsumoto
• 👤 修 松本

Bibliographic Details