Distributed reflection semiconductor laser element

Abstract

Abstract PURPOSE:To contrive the improvement of the coupling efficiency of an active region and optical waveguide layers by a method wherein the impurity-doped regions of an active layer are used as the optical waveguide layers, the impurity- undoped region of the active layer is used as the active region and these optical waveguide layers and the active region are formed of the same quantum well layer (active layer). CONSTITUTION:An active layer 26 has an active region 32 and optical waveguide layers 34, the layers 34 are used as disordered regions that a multi- quantum well (MQW) structure is disordered by doping part of the layer 26 with an impurity and the residual part of the layer 26 is used as the region 32. The disordering of the MQW structure, which is executed by doping an impurity, is executed in such a way that an absorption of the layers 34 to the oscillation wavelength of light to be emitted from the region 26 is eliminated (nearly zero) or is lessened. Thereby, the coupling efficiency of the region 32 and the layers 34 is improved and a nearly complete coupling of the region 32 and these layers 34 can be obtained.

Inventors

• 👤 Hiroshi Ogawa
• 👤 洋 小川
• 👤 Hiroshi Wada
• 👤 浩 和田
• 👤 Masato Kawahara
• 👤 正人 川原
• 👤 Masao Kobayashi
• 👤 正男 小林

Bibliographic Details