charge transfer device

Abstract

Abstract PURPOSE:To prevent the decrease in transfer efficiency even if many picture elements are provided, by forming a horizontal transfer part with polysilicon in a three-layered structure, and constituting horizontal transfer electrodes with the polysilicon layers of a first layer and a second layer. CONSTITUTION:A third polysilicon layer, which constitutes a gate electrode 11, is arranged so as to cross first and second polysilicon layers at the approximately central parts in the vertical direction. The first and second polysilicon layers are divided into two parts in the upper and lower directions. Holes are provided at the parts of the first and second polysilicon layers, which correspond to every other vertical CCDs of, e.g., vertical transfer parts 2, in the crossing regions. The third polysilicon layer is arranged on a substrate. In the hole regions, differences are provided in depth of the potential wells of the holes. A barrier region 16 is formed in this way. The transfer efficiency of the horizontal CCD is not effected even if dispersion in machining of the third polysilicon layer becomes large.

Inventors

• 👤 Hideki Muto
• 👤 秀樹 武藤

Bibliographic Details