Forming method for resist pattern

Abstract

Abstract PURPOSE:To obtain a resist pattern having no pattern distortion and no pattern position displacement by coating a substrate with a thin conductive polymer film, then heat-treating the film, exposing it to an electron beam, and developing it to form a thin conductive polymer film pattern. CONSTITUTION:A polystrylene ammonium sulfonate film is formed as a thin conductive polymer film 2 on a semi-insulating GaAs substrate 1. The film is formed by rotatably coating it with aqueous ammonium sulfonate solution, and heat-treating it in a nitrogen atmosphere. Then, it is exposed to an electron beam 3. Thus, the pattern exposed film is developed in methyl alcohol for 10 sec. to form a pattern 4. Thus, this process can prevent a charging phenomenon without using a thin Si film, thereby realizing an accurate resist pattern without pattern distortion and position displacement.

Inventors

• 👤 Hisashi Watanabe
• 👤 尚志 渡辺
• 👤 Yoshihiro Todokoro
• 👤 義博 戸所

Bibliographic Details