Semiconductor device

Abstract

Abstract PURPOSE:To fine a logic circuit section, and to increase the breakdown strength of a high breakdown strength section by changing the thickness of gate films in the logic circuit section and the high breakdown strength section. CONSTITUTION:A gate film 4 in a logic circuit section is brought to a value such as 400Angstrom , thus resulting in approximately 2mum as the channel length of a MOS type transistor. A gate film 7 in a high breakdown strength section is brought to a value such as 100Angstrom , thus resulting in application up to approximately 50V as gate voltage. Accordingly, the fining of the logic circuit section and the increase of the breakdown strength of the high breakdown strength section are attained.

Inventors

• 👤 Kazuhiro Takenaka
• 👤 竹中　計廣

Bibliographic Details