Manufacture of multifunction semiconductor device

Abstract

Abstract PURPOSE:To obtain a device having the functions of a laser transistor and an FET on a III-V compound semiconductor substrate utilizing the inversion phenomenon of the conductivity type of a layer to grow on a stepped slant face. CONSTITUTION:A step difference of 0.3 mum is formed on the (111) face of a semi- insulative GaAs substrate 1 by etching and a slant face 2 with an exposed (111) A face is formed. The ethcing liquid is one consisting of 1H2SO4+8H2O2+1H2O. A p-type Al0.3Ga0.7As layer 3, an n-type GaAs layer 4 and a p-type Al0.3Ga0.7As layer 5 are continuously grown by an MBE method. In the region (a) of the slant face 2, the n-type GaAs layer 4 is grown on the (111) A face in a state of quasi-equilibrium and an additional impurity Si is substituted at the lattice point of As to work as an acceptor and is inverted into a P-type. An etching is selectively performed to remain a laminated material on the slant face and Au/AuGe electrodes (c) and (e) and Au/Zu/Au electrodes (b) and (d) are attached on the exposed surface of each layer. A horizontal n-p-n bipolar transistor is formed on the layer 4 and actuated as a laser transistor by current conduction between the electrodes (d) and (b) and a vertical FET, wherein the currents of the electrodes (d) and (b) are controlled by the electrodes (c) and (e), is jointly provided.

Inventors

• 👤 Shuichi Miura
• 👤 秀一 三浦

Bibliographic Details