Semiconductor device

Abstract

Abstract PURPOSE:To decrease the contact resistance while preventing junction breakdown, etc., from occuring by a method wherein a barrier metal is brought into contact with an electrode interconnection comprising Al on a diffused layer to raise the impurity concentration in the diffused layer on the contact part. CONSTITUTION:The shallower the junction depth, the more the possibility of junction breakdown due to alum.spike, therefore, a barrier metal 5 must be laid down below an aluminium interconnection 6 to prevent the junction breakdown from occuring. However, when the metal 5 is brought into contact with a layer 2 in low concentration to form the P type diffused layer 2 especially a shallow diffused layer, the contact resistance is raised markedly. To prevent the resistance from being raised, the impurity concentration is raised selfmatchingly in the contact region only by ionimplanting impurity in the same conductivity type as that of the layer 2 and annealing process after making a contact hole. Through these procedures, the barrier metal 5 can be brought into contact with a diffused layer 4 in high impurity concentration to decrease the contact resistance markedly.

Inventors

• 👤 Katsuhiro Tsukamoto
• 👤 塚本　克博
• 👤 Masahiro Shimizu
• 👤 雅裕 清水
• 👤 Akihiko Osaki
• 👤 明彦 大崎
• 👤 Tatsuro Okamoto
• 👤 岡本　龍郎

Bibliographic Details