Semiconductor light emitting device and its manufacturing method

Abstract

Abstract PURPOSE:To obtain a short wavelength light emitting element having high light emitting efficiency and high intensity by holding a ZnSSeTe mixed crystal by P-and N-type superlattice structure laminated layer film to form a double hetero junction structure. CONSTITUTION:ZnS 2 which contains n-type dopant and ZnTe 3 which does not contain the dopant are alternately laminated on an N-type GaAs substrate 1, an N-type superlattice third layer 4 is formed, and an N-type mixed crystal layer 5 is obtained with ZnS0.1Tc0.9 mixed crystal which contains N-type dopant is then obtained. Further, ZnTe 6 which contains P-type dopant and ZnS 7 which does not contain the dopant are laterally laminated to form a P-type superlattice second layer 8, a P-type ohmic electrode 9 and an N-type ohmic electrode 10 are formed to obtain a double hetero junction structure semiconductor light emitting element. Further, this element is manufactured by an organic metal vapor decomposing method.

Inventors

• 👤 Takashi Shimobayashi
• 👤 隆 下林

Bibliographic Details