Magnetron sputtering method

Abstract

Abstract PURPOSE:To increase the efficiency of utilization of a target and to make a formed thin film uniform by placing a split magnet on the rear side of the target so as to increase a leak of a magnetic field from the center of the target in the circumferential direction and by rotating the magnet. CONSTITUTION:A split magnet 6a, 6b, 6c is placed on a turntable 24 on the rear side of a target 16 and the outside of a sputtering chamber 8. The turntable 24 is turned to rotate a sputtering region around the center of the target 16 and atoms sputtered from the target 16 by electric discharge are deposited in the circumferential direction of a circular substrate 14. A leak of a magnetic field formed by the magnet 6a-6c rotates in a nearly sectorial shape and the erosion of the target 16 proceeds to a uniform depth. By the transfer of the sputtering region in the circumferential direction, the deposition of the sputtered atoms is carried out in the circumferential direction of the substrate 14.

Inventors

• 👤 Masahisa Naoe
• 👤 直江　正久
• 👤 Makoto Ando
• 👤 誠 安藤

Bibliographic Details