Semiconductor laser and manufacture thereof

Abstract

Abstract PURPOSE:To decrease the coupling loss between the tapered parts of an active layer and a light guide layer, by providing the second light guide layer on the active layer furthermore, and making the distribution center of an electric field of guided light propagating in the active layer to agree with that of guided light propagating in a low NA light guide for light emission. CONSTITUTION:A first light guide layer 2, an active layer 3 and a second light guide layer 2' are sequentially laminated on a semiconductor single crystal substrate, which is to become a first clad layer 1, and a first laminated substrate is obtained. An etching mask plate 8B, which has grooves 9A having the specified width and the specified depth, is prepared. Common etching liquid for the semiconductor single crystal substrate can be used for a material, which constitutes the mask plate 8B. The mask plate 8B is overlapped on the active layer 3 so that the parts of the grooves 9A agree with the positions of the active layer 3, where tapered parts 3T are to be formed. The device is immersed into the etching liquid, and the tapered parts 3T are formed in the active layer 3. Thus a wafer 8A is obtained. Then, the second light guide layer 2' is laminated to a specified thickness. A second clad layer is laminated, and a semiconductor laser is obtained.

Inventors

• 👤 Hiroshi Terui
• 👤 博 照井
• 👤 Akira Himeno
• 👤 明 姫野
• 👤 Morio Kobayashi
• 👤 盛男 小林

Bibliographic Details