Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a titanium silicide film in which surface roughness does not occur by heat-treating the metal-rich titanium silicide film in a nitrogen atmosphere when the film is selectively formed on a silicon substrate. CONSTITUTION:A metal-rich titanium silicide layer 3 is selectively formed on a silicon substrate 1 provided with an element isolating insulating film 2, kept exposed and heat-treated in a high purity nitrogen atmosphere to convert a titanium silicide phase into a stable disilicide (TiSi2), and high concentration nitrogen atoms are implanted to the vicinity of a crystal grain boundary. Since the diffusion of silicon atoms into the layer 3 (TiSi2 layer implanted with high concentration nitrogen atoms to crystal grain boundary) in the reflow of an interlayer insulating film 4 and a heat treatment for the purpose of activating the impurity, such a reaction as to introduce an irregularity by the coagulation of the layer 3 is not advanced. Thus, a preferable titanium silicide junction having sufficient uniformity can be obtained.

Inventors

• 👤 Takehito Yoshida
• 👤 岳人 吉田

Bibliographic Details