Production of semiconductor device

Abstract

Abstract PURPOSE:To reduce a pattern edge effect, a pattern dimensional effect and self-addition in a buried and diffused region, which is generated in an epitaxially grown layer, and to perform embedding and diffusion by a method wherein a selective oxidation is performed using an SiO2 film and an Si3N4 film as masks to perform a buried diffusion window. CONSTITUTION:The pattern of a CVD Si3N4 film 7 is provided on a thermal oxide film 7a of a p-type Si substrate 1 to oxidize and an SiO2 film 4a is formed. The mask 7 is removed to provide an aperture in the film 7a and the whole surface is covered with an n<+> silica film coating film 2. A treatment is performed at 1000 deg.C or more and n<+> buried layers different in impurity concentration and diffusion depth are formed. The coating film 2 and the film 4a are removed and an n-type epitaxial layer 8 is formed on the whole surface. After that, a dielectric isolation 9 is performed and a p-type base layer 11 and an n-type emitter layer 13 are each provided in the n-type layers. By this constitution, a buried and diffused region conformed roughly as designed can be formed.

Inventors

• 👤 Junichi Hattori
• 👤 純一 服部

Bibliographic Details