Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form the peripheral structure of a T-shaped gate electrode under the optimum state by shaping a side wall consisting of a second dielectric on a first dielectric layer, forming the gate electrode and selectively removing the first dielectric layer to a semiconductor base body and the side wall of the second dielectric by using nitrogen trifluoride gas. CONSTITUTION:A non-doped GaAs layer 2, an N-type AlGaAs layer 3 and an N-type GaAs layer 4 are grown on a semi-insulating GaAs substrate 1 in an epitaxial manner, an SiON layer 5 is deposited on a base body 1 to which a two-dimensional electron gas 2e is shaped, a resist 11 is applied to form a gate pattern, and the SiON layer 5 is dry-etched, using the gate pattern as a mask. An SiO2 layer 6 is shaped, the layer 6 is dry-etched from an upper surface to remove a plane section, an SiO2 layer 6W is left as the side wall of the layer 5, and a gate electrode 7 is formed onto the layer 6W. A mask 12 is shaped and dry etching is conducted by NF3, the layer 5 is gotten rid of up to source-drain electrode foring regions from the lower section of a section projected to an eave shape in the gate electrode 7 and the side wall 6W is left.

Inventors

• 👤 Satoru Asai
• 👤 了 浅井
• 👤 Kazukiyo Tsunenobu
• 👤 和清 常信

Bibliographic Details