Manufacture of semiconductor element

Abstract

Abstract PURPOSE:To improve the reliability of a semiconductor element by forming a gate electrode in a 2-layer structure formed with a polycrystalline silicon and a silicide formed thereon, patterning the electrode by dry etching, simultaneously forming a step between an upper silicide film and a polycrystalline silicon film, and then performing ion implantion, thereby eliminating a variation in its characteristics. CONSTITUTION:A gate oxide film 33 is formed by thermally oxidizing on a silicon substrate 31 of an active region, a polycrystalline silicon film 34 is formed on a whole surface including the surface of the film, and a silicide film 35 is formed on the whole surface. With a resist 36 formed by photolithography technique the films 34 and 35 are dry etched to for a step. The mask 35 is removed, and phosphorus ions are implanted. Then, the phosphorus is arrived partly at the stepped part of the substrate 31. Thereafter, it is annealed, and activated to form an LDD structure. Then, an insulating layer 39 is formed on the whole surface, a contact hole is formed, metal wirings 40 are connected to an N<+> type region 38.

Inventors

• 👤 Hiroshi Aoki
• 👤 浩 青木

Bibliographic Details