Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable occurrence of a hillock in a wiring layer to be completely suppressed, by piling a tungsten film on the exposed surface including the upper and side planes of the wiring layer, and then producing a tungsten-aluminium reactive layer. CONSTITUTION:On an insulating film 1 such as PGS formed on a substrate, an aluminium-silicon alloy layer is piled, and then a wiring pattern is formed to obtain a wiring layer 2. A tungsten-coated film 3 is piled non-selectively, for example, on the whole exposed surface including the upper and side planes of the wiring layer 2. Successively, heat treatment is performed at temperature under a melting point of Al in an enzyme atmospere. A reactive layer 4 having substance such as tungsten-aluminium alloy (WAl12) is produced by invasion of tungsten in the wiring layer 2 in this process. Concurrently the tungsten film 3 piled all over the surface is completely oxidized in the range extending over the exposed insulating film 1 by means of photo-lithography, to produce an insulating film 5 made of oxide such as tungsten oxide (WO3).

Inventors

• 👤 Hiroaki Otsuki
• 👤 大槻　博明

Bibliographic Details