Semiconductor memory device

Abstract

Abstract PURPOSE:To early finish a sensing action and to read a memory at a high speed by transmitting the potential difference produced between a pair of bit lines to a bit line part of a sense amplifier through a barrier transistor and then tuning off the barrier transistor to start the working of the sense amplifier. CONSTITUTION:The potential of a selected work line is activated and therefore a minute potential difference is produced between the bit lines BL and the inverse of BL connected to a selected memory cell in response to the data on the memory cell. Then a signal phiT is set at a low potential after said potential difference is satisfactorily transmitted up to the bit line parts alpha and the inverse of alpha to which a sense amplifier 12 connected. Thus barrier transistors T1 and T2 are turned off. Then the amplifier 12 and a restoring circuit 11 are are actuated via control and the potential difference between the parts alphaand the inverse of alpha is sensed early since the load capacities of both parts alphaand the inverse of alpha are very small. When the sensing action of the amplifier 12 is started, the potential difference of the bit line part having a small capacity is sensed and amplified. Thus the sensing action speed is extremely increased.

Inventors

• 👤 Masaki Ogiwara
• 👤 荻原　正毅

Bibliographic Details