Pattern forming method

Abstract

Abstract PURPOSE:To form a two-layer pattern of different kinds of metal with high accuracy, by forming a two-layer film pattern, implanting ion, arranging a resist film on a substrate except for the pattern, and forming a second metal film after a thin film is eliminated. CONSTITUTION:A two-layer film pattern P of a first metal film 14 and a thin film 15 is formed on a semiconductor substrate 11. After ion implantation using the pattern P as a mask and then annealing, a resist film 16 is formed on the whole surface. The film 16 on the thin film pattern 15 is eliminated, and further the thin film pattern 15 only is eliminated. After a second metal film 17 is formed on the surface, the resist film 16 and the metal film 17 on the film 16 are eliminated by lift-off method, and a second metal film pattern 18 is formed on the metal film pattern 14.

Inventors

• 👤 Hirobumi Nakano
• 👤 博文 中野

Bibliographic Details