Formation of thin film

Abstract

Abstract PURPOSE:To contrive the reduction of an impurity concentration by adding a second gas component for etching an impurity component of a thin film by means of the irradiation with the light of a second wavelength to a gas and irradiating a substrate with a pulse beam of the second wavelength by a shorter period than the time required for increasing the thickness of the thin film corresponding to one molecular layer. CONSTITUTION:A CVD gas supply system 9 supplies a mixed gas of SiH2Cl2, N2, and N2O gasses to a CVD cell 8 and an etching gas supply system 10 supplies a C2gas for etching, when these are applied to CVD of SiO2. A first pulse laser beam source 1 composed of an ArF excimer laser is used for exciting a CVD gas and a second pulse laser beam source 2 composed of an XeCl excimer laser is used for exciting Cl2 of the etching gas. Namely, a beam pulse for exciting the etching gas is projected by a shorter period than the time required for increasing the thickness of an thin film corresponding to one molecular layer. Consequently, impurities can be removed by an etching reaction before the impurities are taken into a CVD film.

Inventors

• 👤 Yukio Morishige
• 👤 幸雄 森重
• 👤 Shunji Kishida
• 👤 岸田　俊二

Bibliographic Details