Etching method

Abstract

Abstract PURPOSE:To obtain an accurate wiring pattern by providing steps of oxidizing the sidewall of an aluminum or aluminum alloy on the way of etching. CONSTITUTION:An Al-Si layer 2 of a film to be etched is formed 1.2mum thick on an SiO2 layer 1, a photoresist 3 is further formed 1.3mum thick thereon, and a wiring pattern is formed on the photoresist. Then, mixture gas which mainly contains BCl3/Cl2 is fed under the pressure of 4.7Pa to etch the Al-Si layer in power density of 0.21W/cm<2>. When the layer 1 is exposed, the etching is interrupted. Then, O2 gas is fed under the pressure of 4.7Pa, and it is overetched in power density of 0.21W/cm<2>.

Inventors

• 👤 Keiji Shinohara
• 👤 啓二 篠原

Bibliographic Details