Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To reduce base resistance and increase the working speed of a semiconductor device by a simple process by forming a collector reregion, a base region and an emitter region consisting of predetermined crystal layers and a GaAs crystal layer onto a semi-insulating substrate in succession and shaping an InGaAs crystal layer onto the GaAs crystal layer. CONSTITUTION:An N<+> GaAs crystal layer 12 is formed onto a semi-insulating GaAs substrate 11, and an N-type GaAs layer 13 is shaped onto the layer 12, thus constituting a collector region. A P<+> type GaAs crystal layer 14 as a base region, an N-type AlGaAs crystal layer 15, an N<+> type GaAs crystal layer 16 and an N<+> type InGaAs crystal layer 17 are formed successively onto the collector region, thus organizing an emitter region 17. An SiO2 film 18 is shaped onto the emitter region and patterned, the layers 17-15 are etched, using the film 18 as a mask, and an Si nitride film 19 is formed and the layers 17-15 and film 19 are etched in an anisotropic manner. An SiO2 film 20 is shaped and patterned, a metallic film 24 is formed, a resist film 21 is removed, and base electrode films 22B and an emitter electrode film 22E are shaped. The collector electrode 24 is formed.

Inventors

• 👤 Kazuaki Ishii
• 👤 和明 石井

Bibliographic Details