Algainp light-emitting device and manufacture thereof

Abstract

Abstract PURPOSE:To enable transverse mode control by forming multilayer structure consisting of a current blocking layer having the same conductivity type as a GaAs substrate and GaAs having a different conductivity type onto the base of the mesa structure of a clad layer coated with GaAs in succession. CONSTITUTION:An Se-doped N-type (Al0.4Ga0.6)0.5In0.5 clad layer 2, a non-doped Ga0.5In0.5P active layer 3, and a Zn-doped P-type (Al0.4Ga0.6)0.5In0.5P clad layer 4 are laminated onto an Si-doped N-type GaAs substrate 1 in succession. The clad layer 4 is etched partially to shape a mesa, and GaAs is laminated onto the clad layer 4 to which the mesa is formed to coat the mesa. A Te-doped N-type GaAs current blocking layer 20, a Zn-doped P-type GaAs buried layer 30 and a P-type GaAs cap layer 5 to which Zn is doped in high concentration are laminated successively. The blocking layer 20 is controlled so as not to be shaped to the upper section of the mesa at that time. Accordingly, a transverse mode control can be performed.

Inventors

• 👤 Kenichi Kobayashi
• 👤 健一 小林

Bibliographic Details