Pattern forming method

Abstract

Abstract PURPOSE:To control a scattering of line widths, and to prevent defects such as a lack of a pattern by dipping a film provided on the layer to be etched of a substrate into a developer facing the prescribed film downward, and by developing the photoresist film while stirring the developer. CONSTITUTION:The resist film 4 provided on the laye 2 to be etched of the substrate 1 is dipped into the developer 7 facing the prescribed film downward, and the resist film is developed while stirring the developer 7. The resist film 4 preferably comprises a polymer shown by the formula wherein X is CH3, Cl, Br or F, R1 is 1-4C an alkyl or a halogen substd. alkyl group substd. a hydrogen atom of the alkyl group with F, Cl, or Br atom, (n) is an integer. The developer 7 is preferably a solution contg. CH3COOR2 (R2 is an alkyl group). The developed pattern resist layer 2 to be etched is etched to form the pattern. Thus, the resist film 4 is developed facing the film 4 downward while stirring the developer, thereby enabling to effectively react the film 4 with the developer 7, and to prevent the sticking of a dirt such as a dust to the film 4.

Inventors

• 👤 Shigeru Hayashi
• 👤 茂 林

Bibliographic Details