Forming method for electrode of compound semiconductor element

Abstract

Abstract PURPOSE:To enhance tensile strength without deterioration in element characteristics due to reaction with semiconductor at heat treating time by forming, heat treating the first multilayer metal film containing no Au, then forming the second multilayer metal film containing Au. CONSTITUTION:Ti 3/Pt 4 film is selectively formed on the surface of a compound high frequency film 1. A heat treatment is executed in this state to form a Ti-semicnductor alloy layer, thereby obtaining ohmic electrodes. Thereafter, a surface protective insulating film 5 is formed, the film 5 of the specific region disposed at a part of the Ti 3/Pt 4 film is removed to expose the surface of the Pt 4 film. then, a bonding pad Ti 8/Au 9 are selectively formed on the Pt 4 exposed region and its periphery. By the above steps, it can prevent the Au from reacting with the semiconductor to form an alloy spike, thereby eliminating the deterioration of the element characteristics.

Inventors

• 👤 Hisahiro Ishihara
• 👤 久寛 石原
• 👤 Toshitaka Torikai
• 👤 俊敬 鳥飼

Bibliographic Details