Formation of thin film

Abstract

Abstract PURPOSE:To form plural films on a surface for film formation at a high film growing speed and to decrease the damages on the surface for film formation by simultaneously using electron cyclotron resonance and high frequency or DC in a cylindrical space. CONSTITUTION:The atmosphere formed by mixing the electrons or activated gas formed by the cyclotron resonance by air-core coils 5, 5' and microwave oscillator 3, etc., in a resonance space 2, and product gas is introduced into the cylindrical space formed of frame structure 31. The high frequency or the electric field 33 by a DC power source 6 is applied to the above-mentioned space so as to parallel to the surface for film formation on the substrate 10 and the reactive gas is subjected to the reaction and cracking by the electron cyclotron resonance and both electric and magnetic energies, by which the plural films are formed. The gas to be activated by utilizing the cyclotron energy is selected from inert gases or non-product gases and further >=1 kinds of product gases are preferably selected for the reactive gas.

Inventors

• 👤 Shunpei Yamazaki
• 👤 舜平 山崎

Bibliographic Details