Manufacturing method of photoelectric conversion element

Abstract

Abstract PURPOSE:To make it possible to perform isotropic or anisotropic etching in correspondence with materials and purposes, to form an oxide layer as a passivation layer by using O2 plasma, to obtain high stability and reproducibility and to reduce man-hours, by applying a dry process. CONSTITUTION:On a substrate 1, a photoconducting layer 2 having a specified pattern and a layer 3 having a resistance value lower than that of the photoconducting layer are sequentially laminated. A metal film 4 is formed on the entire surface. Then, a resist film 5 having a specified pattern is formed. With the film 5 as a mask, the metal film 4 is etched, and an electrode is formed. Then, the resist is incinerated and removed with plasma of CF4+O2 or O2. Thereafter, with the electrode metal film 4 as a mask, the low resistance layer 3 is selectively removed with CF4 plasma by ion etching, plasma etching using cathode coupling and the like. Finally, the side surface of the low resistance layer 3 and the exposed surface of the photoconducting layer 2 are oxidized with O2 plasma, and a passivation layer 7 is formed.

Inventors

• 👤 Koji Mori
• 👤 孝二 森

Bibliographic Details