Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable metal of a high melting point to be buried into a contact hole, by forming polycrystal silicon-layered sidewalls on side faces of an insulating layer inside the contact hole by an anisotropic etching method and making a metal of a high melting point selectively grow inside the contact hole. CONSTITUTION:An insulating layer 2 is attached to a base 1, and an opening of a contact hole 3 is made in the insulating layer 2. A polycrystal silicon layer 4 is attached to cover the contact hole 3 and then sidewalls 4A are formed of silicon layers 4 on side faces of the insulating layer 2 inside the contact hole 3 by anisotropic etching method which prevails vertically. Metal 5 of the high melting point is made to selectively grow inside the contact hole 3. Hence, the metal 5 of the high melting point can be buried into the contact hole 3.

Inventors

• 👤 Tsutomu Saito
• 👤 勉 斉藤

Bibliographic Details