Quantum well laser

Abstract

Abstract PURPOSE:To improve carrier implantation efficiency of electrons into a quantum well and obtain a quantum well laser with small threshold current and excellent temperature characteristics by a method wherein the energy difference between the 1st level of the bound levels of electrons of a potential well separated from the quantum well by a barrier layer and the (n)th level of the bound levels of electrons of the quantum well is selected to be smaller than the specific value. CONSTITUTION:A quantum well 5 which is to be an active layer, at least one barrier layer 4 contacted with the quantum well 5 and at least one potential well 3 separated from the quantum well 5 by the barrier layer 4 are provided. The energy difference between the bound level of electrons of the potential well 3 and the (n)th level (wherein n>=2) of the bound levels of electrons of the quantum well 5 is selected to be smaller than 50meV. With this constitution, electrons which are implanted into the potential well 3 are quickly implanted into the quantum well 5 and can contribute to light emission and electrons can be implanted into the quantum well highly efficiently so that a quantum well laser with small threshold current and excellent temperature characteristics can be obtained.

Inventors

• 👤 Mitsunori Sugimoto
• 👤 杉本　満則

Bibliographic Details