Distributed feedback type semiconductor laser

Abstract

Abstract PURPOSE:To obtain a single axial-mode distributed feedback type semiconductor laser having extremely high yield on manufacture by spatially changing the optical gains of the distributed feedback type semiconductor laser at the period of a semiconductor diffraction grating as the diffraction grating containing a semiconductor optical absorption section. CONSTITUTION:The titled laser is constituted of a buffer layer 2 grown on a semiconductor substrate 1 in an epitaxial manner, a semiconductor active layer 3, a spacer layer 4, a semiconductor diffraction grating 5 containing a semiconductor optical absorption section 51, a clad layer 6, an electrode forming layer 7, an N side electrode 8 and a P side electrode 9. With the semiconductor diffraction grating 5, Zn is doped in 2X10<18>identical<m>X<-3>, a crest section in the diffraction grating is 0.12mum thick, a trough section is 0.1mum thick, the period of the diffraction grating is 0.25mum, and the crest sections consist of double layer structure each having thickness of 0.02mum and 0.1mum and the through section In0.84Ga0.16As0.36P0.64 having 0.1mum thickness. In the element structure, currents are injected to the semiconductor active layer 3, and the semiconductor diffraction grating 5 functions as the distributed feedback type semiconductor laser constituting an optical resonator.

Inventors

• 👤 Akira Suzuki
• 👤 明 鈴木

Bibliographic Details