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JPS6283749A Expired / Lapsed JP ⏱️ 0.0 years remaining

Correcting method defect for of photomask

Assignee: Mitsubishi Electric Corp
•
Filing: 1985-10-08
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Granted: —
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Expires: 2005-10-08
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Abstract

Abstract PURPOSE:To decrease the occurrence of separation of a correcting part by irradiating a laser beam or electronic beam to a defective part to be corrected on a photomask in the mixed gas atmosphere with metallic compound gas and carbon compound gas, forming silicon carbide at the defective part and filling the defective part. CONSTITUTION:In a vacuum container 12, a photomask 10 having a defect to be corrected is arranged, and a vacuum degree specified beforehand is kept in the vacuum container 12. Next, by using the stage system, the laser beam irradiating position of a laser beam generating source 4 is almost opposite to a pin hole 3 to be corrected for the photomask, and the silane gas and the carbon dioxide gas are introduced into the vacuum container 12. The position, where a laser beam 5 is irradiated, corresponds to the pin hole 3, a fine area 6 is irradiated so that the irradiating scope can be the same size as the pin hole 3, the beam diameter of the laser beam 5 is adjusted and the pin hole 3 is irradiated. A silicon carbide SiC is formed and accumulated to the pin hole 3, the pin hole 3 is filled by a silicon carbide 13 and comes to be transparent. Thus, without worry about the peeling off of the defect correcting part, correction can be executed without fail.

Inventors

  • 👤 Shuichi Matsuda
  • 👤 修一 松田
  • 👤 Yaichiro Watakabe
  • 👤 渡壁 弥一郎

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-05 09:53
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/72; G03F1/74

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS5270991A Cited
JPS53135276A Cited
JPS57109952A Cited

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