Semiconductor light emitting element

Abstract

Abstract PURPOSE:To improve a characteristics and a reliability, by decreasing thermal resistance, without impairing the functions of a conventional ordinary double heterostructure at all with respect to confinement of light and carriers. CONSTITUTION:On an N-type GaAs substrate 101, the following layers are sequentially formed: an N-type GaAs buffer layer 102; an N-type (Al0.5Ga0.5)0.5 In0.5P layer 103; an undoped (Al0.1Ga0.9)0.5In0.5P layer 104; a P-type (Al0.1Ga0.5)0.5 In0.5P layer 105; a P-type Al0.7Ga0.3As layer 106; and a P-type GaAs layer 107. Of these layers, the laser active layer is the undoped (Al0.1Ga0.9)0.5P layer 104. Injected carriers and emitted light are confined in this layer, and laser oscillation is generated. After each layer is formed by an epitaxial layer, an SiO2 film 108 having a stripe shaped window 115, a P-type electrode 109 made of Au/Zn alloy and an N-type electrode 100 made of Au/Ge alloy are formed. A current is injected in the stripe shaped window 115 and excitation is started, and the undoped (Al0.1Ga0.9)0.5In0.5P active layer 104 can be made to oscillate efficiently.

Inventors

• 👤 Isao Hino
• 👤 日野　功

Bibliographic Details