Field effect transistor

Abstract

Abstract PURPOSE:To improve the temperature characteristic by continuously forming a plurality of gates in non-parallel in any of forward and reverse mesa directions of a compound semiconductor substrate. CONSTITUTION:A gate G of P<+> type region 13 is formed on an N-type region 12 formed on one main surface of a semi-insulating GaAs substrate 11. The gate G is formed in a crest shape continued with portions 13a, 13b along the directions of 45 deg. to forward and reverse mesa directions (a), (b) and perpendicular thereto, and an N-type channel region directly under the gate G is formed in the shape along the gate G. Source and drain electrodes 14, 15 of ohmic metal such as gold-germanium alloy are coated on the surfaces of the region 12 at both sides of the gate G to form a source S and a drain D. Thus, the temperature characteristics are improved, a short-channel effect simultaneously hardly occurs to enable to set submicron order in gate length.

Inventors

• 👤 Katsuaki Itsunoi
• 👤 五ノ井　克明

Bibliographic Details