Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To suppress the deterioration in current driving capability by a method wherein, after a low density region is formed, a second gate electrode is self- matchingly formed on the side wall of a first gate electrode, and a high density source and drain region is formed by performing an ion implantation. CONSTITUTION:After a thermally oxided film 2 is formed on a P-type Si substrate 1, a first gate electrode 3 of N<+> polysilicon film is formed. Then, phosphorus ions 4 are ion-implanted, and a low density N<-> layer 5 is formed. Subsequently, a polysilicon film 6 is deposited on the whole surface using a chemical vapor deposition (CVD) technique. Then, an anisotropic etching, which is a reactive etching, is performed on the polysilicon film 6, the film 6 is left on the side wall part of the first gate electrode 3, and a second gate electrode is formed. Subsequently, arsenic ions 7 are ion-implanted, and the transistor of LDD structure is formed by obtaining a high density N<-> layer 8.

Inventors

• 👤 Kazunobu Mishima
• 👤 三島　和展

Bibliographic Details