Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To avoid layer defects induced by oxidization by a method wherein a semiconductor substrate is subjected to a high-temperature heat treatment in an inert gas atmosphere before the first oxidization process nd oxygen is diffused outward from the surface layer of the semiconductor substrate. CONSTITUTION:A silicon wafer 11 with a suitable oxygen concentration is subjected to high-temperature heat treatment, for instance, in N2 atmosphere at the temperature of 1,100-1,200 deg.C for more than two hours, before mirror- surface polishing in a wafer processing to diffuse oxygen outward from the surface layer of the wafer 11. After that, the mirror-polishing of the wafer 11 is performed. Then, the oxygen concentration in the surface layer of the wafer 11 is sure to be reduced. With this constitution, the layer defects induced by oxidization can be avoided.

Inventors

• 👤 Eiji Chishima
• 👤 千嶋　英二

Bibliographic Details