Semiconductor light emission device

Abstract

Abstract PURPOSE:To facilitate variation of a TE mode and a TM mode and improve both of light extinguishing ratio and S-N ratio by a method wherein a light emitted from the P-N junction of a light emission device is introduced into a laser resonator to which a modulation current is applied and the modulated light is introduced into an optical fiber through a photodetection unit and lenses. CONSTITUTION:A light emitted from the P-N junction provided in an unshown semiconductor light emission device is introduced into a laser chip 1, to which a bias current IB and a modulation current IS are applied, to be subjected to optical amplification. Then the light emitted from the laser chip 1 is introduced into an optical fiber 6 through a lens 2, a photodetection unit 3 composed of a prism beam splitter (PBS) with an optical monitor 4 and a lens 5 in this order and emitted from the optical fiber 6 to the outside. With this constitution, the intensity of the light from the P-N junction can be freely controlled by the variation of the modulation current IS and high speed long distance transmission can be realized while required TE and TM modes being obtained.

Inventors

• 👤 Haruhiko Tabuchi
• 👤 田渕　晴彦

Bibliographic Details