Semiconductor laser array device and manufacture of same

Abstract

Abstract PURPOSE:To generate multi-wavelength laser lights by a method wherein a plurality of mesa parts which have respective V-grooves are protruded on the surface of a semiconductor substrate and an active layer and so forth are deposited over the whole surface and the substrate is divided into laser regions including respective mesa parts by isolation grooves and distances between the mesa parts and the ridge parts of the active layers of the respective divided laser regions are different from each other. CONSTITUTION:A plurality of mesa parts 9 which have V-grooves 11 on their surfaces are protruded on a P-type GaAs substrate 1. The substrate 1 are divided into individual laser regions which include respective mesa parts 9 by deep isolation grooves 13 which are dug into the substrate 1. Then an N-type GaAs layer 2, a P-type AlGaAs cladding layer 3, an AlGaAs activation layer 4, an N-type AlGaAs cladding layer 5 and an N-type GaAs contact layer 6 are deposited on every laser region in order to constrict the current in the isolation groove 13. At that time, in the respective laser regions, the distances between ridges 10 at both ends of the activation layers 4 and the V- grooves 11 are made to be different from each other in order to create different thresh old current densities. With this constitution, multi-wavelength laser lights can be obtained by one crystal.

Inventors

• 👤 Masahiro Kume
• 👤 雅博 粂
• 👤 Kunio Ito
• 👤 国雄 伊藤

Bibliographic Details