Semiconductor device

Abstract

Abstract PURPOSE:To increase isolation voltage by forming a notch section to a molding resin and breaking a pinch bar along the inner wall section of the notch section. CONSTITUTION:Notch sections 17 are shaped to a molding resin 11 in the upper section of a pinch bar 14a on the side to be broken so that the molding resin is exposed in some length. Such notch sections 17 are limited by inner wall surfaces 18 on the side reverse to end surfaces, bases 19 just under the exposed pinch bars 14a and side wall surfaces 20 vertical to the bases, and the bases 19 run parallel with a mounting surface such as the surface of a radiator plate 21. The longitudinal length of the bars 14a for the bases 19 is made wider than the width of the bars 14a. On the other hand, V grooves are cut to sections to be broken in the bars 14a and break lines 16 are shaped previously. A creeping distance (d) up to the surface of the radiator plate 21 from the broken-out section of the bar 14a is h+b obtained by adding the longitudinal length (b) of the base 19 to height (h) from the surface of the radiator plate of the bar 14a, thus increasing isolation voltage.

Inventors

• 👤 Yoshiaki Sano
• 👤 義昭 佐野

Bibliographic Details