Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain the semiconductor device of excellent characteristics which has a channel region composed of a single crystal semiconductor by single- crystallizing a semiconductor layer by the heat from a gate electrode and source and drain electrodes which are heated to high temperature by irradiation with energy beams. CONSTITUTION:On a glass substrate 1, an SiO2 film 2 (buffer layer), and N<+> type a-Si:H films 4a and 4b and Mo films 3a and 3b of predetermined shape are formed. The films 4a and 3a compose a source electrode 5 and the films 4b and 3b compose a drain electrode 6. An a-Si:H film 7, an SiO2 film 8 composing a gate insulating film, and a gate electrode 10 composed of an Mo film are formed and then etched to expose the end parts of the Mo films 3a and 3b. Irradiating the substrate with the laser beams 11 of XeCl excimer laser, the a-Si:H film 7 is fused and single-crystallized by the heat supplied from the heated gate electrode 10 and the Mo films 3a and 3b, which results in formation of a single crystal region 12. Thus, the Si TFT comprising a channel region composed of single crystal Si can be obtained.

Inventors

• 👤 Setsuo Usui
• 👤 碓井　節夫
• 👤 Toshiyuki Samejima
• 👤 俊之 鮫島
• 👤 Mitsunobu Sekiya
• 👤 関谷　光信

Bibliographic Details