Metal-electrode forming method

Abstract

Abstract PURPOSE:To obtain a gate electrode having a T-shaped cross section characterized by highly accurate control of the width of a pattern and sufficient strength, by forming an insulating film having a hole pattern in a specified shape on a substrate, forming an etched recess part, and thereafter forming a metal film. CONSTITUTION:On a substrate 8 comprising a GaAs active layer, an insulating thin film 9 having a hole for a gate pattern is formed with resist 10 comprising polymethyl methacrylate. Thereafter, the substrate is etched with the mixed liquid of sulfuric acid, hydrogen peroxide and water. An etched recess part covered with the film 9 in an overhung state is formed. Then the resist 10 is removed. After an Al layer 11 is evaporated on the entire surface of the Al layer 11, a resist pattern 12, whose area is wider than the hole pattern, is obtained. With the pattern 12 as a mask, the Al layer 11 is etched. The pattern 12 is removed. Thus a gate electrode having a T-shaped cross section in an MESFET is obtained.

Inventors

• 👤 Hiroshi Yamashita
• 👤 山下　普
• 👤 Yoshihiro Todokoro
• 👤 義博 戸所

Bibliographic Details