Semiconductor device

Abstract

Abstract PURPOSE:To eliminate shortcomings such as the yield of a short-circuit state between a fuse and a semiconductor substrate and the flowing of leak currents, by a structure in which the thickness of a silicon oxide film beneath the fuse is thick. CONSTITUTION:A selective silicon oxide film 6 is formed in a specified region at a part other than a semiconductor-element forming region on a semiconductor substrate 1. A fuse 3 is formed on a silicon film 6. Then, the thickness of the silicon film 6 beneath the fuse 3 can be controlled arbitrarily. In comparison with a conventional device, in which a thermal silicon oxide film formed in the diffusing process in element formation is used as a silicon oxide film directly beneath the fuse material 3, the thickness can be made thick. Thus, the shortcomings such as the yield of short circuits between the fuse 3 and the semiconductor substrate 1 and the flow of leak currents can be eliminated.

Inventors

• 👤 Katsuhiko Tsuura
• 👤 克彦 津浦

Bibliographic Details