Testing apparatus for electronic device and operating method thereof
Abstract
Abstract PURPOSE:To measure the characteristics of a transistor, by using two or three charged beams, feeding the potential, which is controlled at a specified value, to the first and third lighting positions without contact, and measuring the potential of the third lighting position. CONSTITUTION:A charged beam 21, which is generated in the first mirror tube, is accelerated by an accelerating voltage source 24 and projected on the first lighting position on an electronic device 34 on a sample stage 35. A charged beam 22, which is generated in the second mirror tube, is accelerated by an accelerating voltage source 24 and projected on the second and third lighting positions on the electronic device 34 on the sample stage 35. The output of a secondary electron detector 37 is inputted to a potential measuring circuit 39 through an amplifier 38. The output of the potentials measuring circuit 39 corresponds to the potential and is displayed on a display device 43. The output of the amplifier 38 is inputted to a holding circuit 40. When the charged beam 22 is projected, the secondary electron signal is amplified and compared with the secondary electron beam of the charged beam 21 from the holding circuit 40 in a differential amplifier 41. The deviation signal is inputted to the potential measuring circuit 39, and the beam current is controlled.
Inventors
- 👤 Masahiro Yoshizawa
- 👤 吉沢 正浩
- 👤 Akira Kikuchi
- 👤 章 菊池
- 👤 Yasushi Wada
- 👤 康 和田
- 👤 Akihira Fujinami
- 👤 藤波 明平
- 👤 Nobuo Shimazu
- 👤 信生 島津
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