Semiconductor laser

Abstract

Abstract PURPOSE:To largely reduce an operating current by providing a current narrowing mechanism above and below an active layer in an inner striped semiconductor laser to largely improve a current injection efficiency. CONSTITUTION:An N-type GaAs blocking layer 2 is formed by mesa etching on a P-type GaAs substrate 1 having 100 plane and is grown to flatten the surface by liquid-phase epitaxial method. Two parallel ridges are formed by etching at both sides of a groove on a wave. Again the first P-type Ga0.5Al0.5As clad layer 3, the second non-doped Ga0.9Al0.1As active layer 4, the third N-type Ga0.5Al0.5As clad layer 5, the fourth N-type GaAs layer 5 are continuously grown by liquid-phase epitaxial method. Then, a mask is formed, protons are emitted from above to form a high resistance region which arrives at the third layer. After the mask is removed, an N-type ohmic electrode is formed on the third surface. After the mask is removed, an N-type ohmic electrode is formed on the grown surface, and a P-type ohmic electrode is formed on the substrate side, thereby obtained a semiconductor laser device.

Inventors

• 👤 Takeshi Hamada
• 👤 健 浜田
• 👤 Kunio Ito
• 👤 国雄 伊藤
• 👤 Masahiro Kume
• 👤 雅博 粂

Bibliographic Details