Semiconductor laser

Abstract

Abstract PURPOSE:To produce the hetero junction semiconductor laser with excellent reproducibility and yield by a method wherein an active layer is completely buried in a groove between the narrow mesa strips provided on a P type layer on an N type semiconductor layer. CONSTITUTION:An N type buffer layer 202, a P type current block layer 203 are laminated on the surface (100) of an N-InP substrate 201 and two each of the mesa strips 204, 205 are provided in parallel with each other in the direction of (011) making a groove 206. The groove 206 around 2mum wide and 2.5mum deep penetrates the layer 203. Next with the exception of the upper layer of an N-InP clad layer 207, the mesa strips 204, 205, an In0.72Ga0.28As0.61P0.39 active layer 208 is laminated and a P-InP clad layer 209, a P-In0.72Ga0.28As0.61P0.29 electrode layer 210 are provided on the overall surface. Through these procedures, the reproducibility and the yield of crystal growth may be improved remarkably since the growth of the active layer 208 on the upper surface of the narrow mesa strips may be prevented burying the active layer 208 in the groove 206 without fail.

Inventors

• 👤 Mitsuhiro Kitamura
• 👤 北村　光弘

Bibliographic Details