Semiconductor substrate holding jig of semiconductor manufacturing device

Abstract

Abstract PURPOSE:To prevent excessive nitride film adhering to a tray and a wafer holder from scattering by a method wherein irregularities are formed on the surface of jig main body to improve the holding capacity of nitrogen film. CONSTITUTION:Within a plasma type continuous nitride film growing device, a semiconductor substrate 3 is put in a wafer holder 2A upside down to grow a nitride film 4A in the arrow direction. When the nitride film 4A is grown using a tray 1A and the wafer holder 2A, the nitride film 4A looks as shown in figure. In other words, the holding capacity of nitride film 4A can be improved by the surface irregularities to prevent the nitride film 4A from scattering even if the tray 1A and the wafer holder 2A are cooled down for contraction.

Inventors

• 👤 Yuji Sugita
• 👤 雄二 杉田

Bibliographic Details