Laminated semiconductor device

Abstract

Abstract PURPOSE:To realize high integrity of a device by providing an MOS-type active element of a vertical structure in a recrystallization layer. CONSTITUTION:A polycrystalline silicon layer, which is to be the second active layer, is deposited on a through hole 8 with a relatively large thickness and recrystallized. As P<+> or As<+> ions in the polycrystalline silicon in the through hole 8 are diffused into the substrate, ohmic contact between the polycrystalline silicon in the through hole 8 and the recrystallization layer 4 is ensured. After the element isolation by substrate checking or the like, a gate oxide film 9 is formed. After gate polycrystalline silicon for forming a gate electrode 6 is applied and patterned, double-ion implantation of B<+> and P<+> (or As) is performed to form a P-type layer 31 and an N<+> type layer 32. In this structure, a current flows vertically as shown by an arrow. It is to be noted that, in this structure, bidirectional characteristics is ensured and the gate can be used as a transfer gate without any problem.

Inventors

• 👤 Takahiko Oma
• 👤 隆彦 大麻
• 👤 Isao Nakamura
• 👤 功 中村

Bibliographic Details