Manufacture of insulated gate type semiconductor device

Abstract

Abstract PURPOSE:To produce inverters by high integration by a method wherein a semiconductor of single crystal or polycrystalline structure further forming a channel is provided in the periphery of two sides of a laminated body in three layers, and the two titled devices are manufactured by using this semiconductor. CONSTITUTION:A non-single crystal semiconductor 13 of a photo transmitting conductive film containing tin oxide as the main constituent is provided on an insulating substrate 1, and an insulator 14 and a semiconductor 15 as the same conductivity type as that of the semiconductor 13 are laminated into a laminated body. A source and a drain are composed by using the semiconductors 13 and 15, a channel-forming region of non-single crystal semiconductor covering a conductor 23 and the insulator 24 being provided in adjacent to the side of the laminated body, and a gate insulation film 16 and a gate electrode 20 being provided on this region. At that time, the semiconductor constituting this region is allowed to have a single crystal or polycrystalline structure by irradiation with strong light or laser beam, resulting in the manufacture of the two titled devices.

Inventors

• 👤 Shunpei Yamazaki
• 👤 舜平 山崎

Bibliographic Details